The main features determining spin-dependent transport in magnetic tunnel junctions are well appreciated now mainly due to ab initio calculations. Nevertheless, it seems useful to have a comparatively simple model which reproduces the salient characteristics of spin-dependent transport in magnetic multilayers. We present two-band tight-binding model of magnetic tunnel junction with the layers of arbitrary thickness and non-collinear magnetization configuration. The model accounts for different symmetry of the tunneling electrons and their mixing on the interfaces. As an illustration for double-barrier structure we calculate I-V curves and spin-transfer torque. The calculations demonstrate the resonant character of the I-V dependences. Also, the significant difference in the magnitude of the torque acting on the various planes of the same magnetic layer is found.
| Published in | International Journal of Materials Science and Applications (Volume 2, Issue 1) |
| DOI | 10.11648/j.ijmsa.20130201.13 |
| Page(s) | 20-29 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2013. Published by Science Publishing Group |
Magnetic Tunnel Junction, Two-Band Model, I-V Curves, Spin-Transfer Torque
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APA Style
N. Strelokov, M. Zhuravlev, N. Ryzhanova, A. Vedyayev. (2013). A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions. International Journal of Materials Science and Applications, 2(1), 20-29. https://doi.org/10.11648/j.ijmsa.20130201.13
ACS Style
N. Strelokov; M. Zhuravlev; N. Ryzhanova; A. Vedyayev. A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions. Int. J. Mater. Sci. Appl. 2013, 2(1), 20-29. doi: 10.11648/j.ijmsa.20130201.13
AMA Style
N. Strelokov, M. Zhuravlev, N. Ryzhanova, A. Vedyayev. A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions. Int J Mater Sci Appl. 2013;2(1):20-29. doi: 10.11648/j.ijmsa.20130201.13
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Download@article{10.11648/j.ijmsa.20130201.13,
author = {N. Strelokov and M. Zhuravlev and N. Ryzhanova and A. Vedyayev},
title = {A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions},
journal = {International Journal of Materials Science and Applications},
volume = {2},
number = {1},
pages = {20-29},
doi = {10.11648/j.ijmsa.20130201.13},
url = {https://doi.org/10.11648/j.ijmsa.20130201.13},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130201.13},
abstract = {The main features determining spin-dependent transport in magnetic tunnel junctions are well appreciated now mainly due to ab initio calculations. Nevertheless, it seems useful to have a comparatively simple model which reproduces the salient characteristics of spin-dependent transport in magnetic multilayers. We present two-band tight-binding model of magnetic tunnel junction with the layers of arbitrary thickness and non-collinear magnetization configuration. The model accounts for different symmetry of the tunneling electrons and their mixing on the interfaces. As an illustration for double-barrier structure we calculate I-V curves and spin-transfer torque. The calculations demonstrate the resonant character of the I-V dependences. Also, the significant difference in the magnitude of the torque acting on the various planes of the same magnetic layer is found.},
year = {2013}
}
TY - JOUR T1 - A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions AU - N. Strelokov AU - M. Zhuravlev AU - N. Ryzhanova AU - A. Vedyayev Y1 - 2013/01/10 PY - 2013 N1 - https://doi.org/10.11648/j.ijmsa.20130201.13 DO - 10.11648/j.ijmsa.20130201.13 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 20 EP - 29 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20130201.13 AB - The main features determining spin-dependent transport in magnetic tunnel junctions are well appreciated now mainly due to ab initio calculations. Nevertheless, it seems useful to have a comparatively simple model which reproduces the salient characteristics of spin-dependent transport in magnetic multilayers. We present two-band tight-binding model of magnetic tunnel junction with the layers of arbitrary thickness and non-collinear magnetization configuration. The model accounts for different symmetry of the tunneling electrons and their mixing on the interfaces. As an illustration for double-barrier structure we calculate I-V curves and spin-transfer torque. The calculations demonstrate the resonant character of the I-V dependences. Also, the significant difference in the magnitude of the torque acting on the various planes of the same magnetic layer is found. VL - 2 IS - 1 ER -
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