Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s

Bablu K. Ghosh; Ismail Saad; Akio Yamamoto

doi:doi:10.11648/j.ijmsa.20130202.12

| Peer-Reviewed

Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s

Bablu K. Ghosh, Ismail Saad, Akio Yamamoto

Published in International Journal of Materials Science and Applications (Volume 2, Issue 2)

Published: 10 March 2013

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm) GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found. Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.

Published in	International Journal of Materials Science and Applications (Volume 2, Issue 2)
DOI	10.11648/j.ijmsa.20130202.12
Page(s)	43-46
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Wide band gap, UV detector, RF power electronics, Optoelectronics, Photoluminescence, h-GaN, iso-electronic, Ohmic contact

References

[1]	S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai, Jpn. J. Appl. Phys. 34, L1332 (1995).
[2]	R. M. Swanson, "The Promise of Concentrators," Progress in Photovoltaics: Res. Appl. 8, pp. 93-111 (2000).
[3]	Akio Yamamoto*, Md. R. Islam, Ting-Ting Kang, and Akihiro Hashimoto, Phys. Status Solidi C 7, No. 5 (2010)
[4]	D. Wang, S. Yoshida, Y. Hiroyama, M. Ichikawa, IPAP Conf. Series 1 (2000) 355.
[5]	N.P. Kobayashi, J.T. Kobayashi, W. Choi, P.D. Dapkus, X. Zhang, D.H. Rich, J. Crystal Growth 189/190 (1998) 172.
[6]	P. Javorka, A. Alam, M. Marso, M. Wolter, A. Fox, M. Heuken and P. Kordos, Phys. Stat. sol. (a) 194, No. 2, 472 (2002).
[7]	S. Zamir, B. Meyler and J. Salzman, Appl. Phys.Lett.78, 288 (2001).
[8]	B.K. Ghosh, T. Tanikawa, A. Hashimoto, A.Yamamotoand Y. Ito, J. Cryst growth, 249 , 422 (2003) .
[9]	A. Yamamoto, T. Yamauchi, T. Tanikawa, M. Sasase, B.K. Ghosh, A. Hashimoto, and Y. Ito, J. Cryst growth, 261, 266 (2004) .
[10]	M. E. Jones, J. R. Shealy and J. R. Engstrom, Appl. Phys. Lett., 67, 542 (1995).
[11]	H.M. Liaw, R. Venugopal, J. Wan, R. Doyle, P.L. Fejes and M.R Melloch, Sol. Stat. Electro., 44, 685 (2000) .
[12]	E. Iliopoulos, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, Appl. Phys. Lett. 73(1998)375.

Cite This Article

Plain Text BibTeX RIS

APA Style

Bablu K. Ghosh, Ismail Saad, Akio Yamamoto. (2013). Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. International Journal of Materials Science and Applications, 2(2), 43-46. https://doi.org/10.11648/j.ijmsa.20130202.12

Copy | Download

ACS Style

Bablu K. Ghosh; Ismail Saad; Akio Yamamoto. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. Int. J. Mater. Sci. Appl. 2013, 2(2), 43-46. doi: 10.11648/j.ijmsa.20130202.12

Copy | Download

AMA Style

Bablu K. Ghosh, Ismail Saad, Akio Yamamoto. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. Int J Mater Sci Appl. 2013;2(2):43-46. doi: 10.11648/j.ijmsa.20130202.12

Copy | Download

@article{10.11648/j.ijmsa.20130202.12,
  author = {Bablu K. Ghosh and Ismail Saad and Akio Yamamoto},
  title = {Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s},
  journal = {International Journal of Materials Science and Applications},
  volume = {2},
  number = {2},
  pages = {43-46},
  doi = {10.11648/j.ijmsa.20130202.12},
  url = {https://doi.org/10.11648/j.ijmsa.20130202.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130202.12},
  abstract = {The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm)  GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found.  Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s
AU  - Bablu K. Ghosh
AU  - Ismail Saad
AU  - Akio Yamamoto
Y1  - 2013/03/10
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20130202.12
DO  - 10.11648/j.ijmsa.20130202.12
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 43
EP  - 46
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20130202.12
AB  - The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm)  GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found.  Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.
VL  - 2
IS  - 2
ER  -

Copy | Download

Author Information

Bablu K. Ghosh

Dept. of Electrical and Electronic Eng.,Univeristi Malaysia, sabahUniversity, Jalan UMS 88400 ,Kota-kinabalu, Sabah, Malaysia
Ismail Saad

Dept. of Electrical and Electronic Eng.,Univeristi Malaysia, sabahUniversity, Jalan UMS 88400 ,Kota-kinabalu, Sabah, Malaysia
Akio Yamamoto

Dept. of Electrical & Electronic Eng., Fukui University, Bunkyo 3-9-1, Fukui 910-8507, Japan

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Bablu K. Ghosh, Ismail Saad, Akio Yamamoto. (2013). Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. International Journal of Materials Science and Applications, 2(2), 43-46. https://doi.org/10.11648/j.ijmsa.20130202.12

Copy | Download

ACS Style

Bablu K. Ghosh; Ismail Saad; Akio Yamamoto. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. Int. J. Mater. Sci. Appl. 2013, 2(2), 43-46. doi: 10.11648/j.ijmsa.20130202.12

Copy | Download

AMA Style

Bablu K. Ghosh, Ismail Saad, Akio Yamamoto. Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s. Int J Mater Sci Appl. 2013;2(2):43-46. doi: 10.11648/j.ijmsa.20130202.12

Copy | Download

@article{10.11648/j.ijmsa.20130202.12,
  author = {Bablu K. Ghosh and Ismail Saad and Akio Yamamoto},
  title = {Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s},
  journal = {International Journal of Materials Science and Applications},
  volume = {2},
  number = {2},
  pages = {43-46},
  doi = {10.11648/j.ijmsa.20130202.12},
  url = {https://doi.org/10.11648/j.ijmsa.20130202.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130202.12},
  abstract = {The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm)  GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found.  Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Optoelectronic Properties of Improved GaN Semiconductor on Si(111) Using Growth Approaches And Different Interlayer’s
AU  - Bablu K. Ghosh
AU  - Ismail Saad
AU  - Akio Yamamoto
Y1  - 2013/03/10
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20130202.12
DO  - 10.11648/j.ijmsa.20130202.12
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 43
EP  - 46
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20130202.12
AB  - The crystalline quality of wider direct band gap semiconductor (3.4 eV) hexagonalGaN(h-GaN)epilayer grown on Si(111) is evaluated by using different growth approaches and interlayer’s. The investigations of GaNepilayer crystal quality for the template of converted porous GaN layer formed by novel nitridation process of thin (2 and 0.5μm)  GaAs layer on Si(111) and on C+ ion implanted very thin SiC layer formed on Si(111) and grown ambient effect are made. Epilayer grown on thinner non-isoelectronic converted SiC templates is found to broaden its PL line width whereas epilayer grown on porously converted GaN layer fromed from iso- electronic GaAs (111) layer on Si(111) is found narrow line width. H2 ambient grown film better crystalline quality and higher PL Ex. peak energy is found as compared to N2 ambient grown film. Low temperature PL measurement, similarity between defect related donor-acceptor peaks (DAP) to defect related yellow band luminescence at the room temperature PL measurement is also found.  Grown epilayer different characterization reveals better crystalline quality h-GaN is achieved by using thin iso-electronic GaAS interlayer on Si(111) with H2 grown ambient.
VL  - 2
IS  - 2
ER  -

Copy | Download