Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)

M. Ourrad; A. Merad; T. Benouaz

doi:doi:10.11648/j.ijmsa.20130203.11

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Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)

M. Ourrad, A. Merad, T. Benouaz

Published in International Journal of Materials Science and Applications (Volume 2, Issue 3)

Received: 28 March 2013 Published: 2 May 2013

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Abstract

The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.

Published in	International Journal of Materials Science and Applications (Volume 2, Issue 3)
DOI	10.11648/j.ijmsa.20130203.11
Page(s)	78-82
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Ferroelectric Capacitor, FEM-FET Transistor, FeRAM, Landau-Devonshire’s Theory of Phase Transition, Ferroelectric Properties

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APA Style

M. Ourrad, A. Merad, T. Benouaz. (2013). Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). International Journal of Materials Science and Applications, 2(3), 78-82. https://doi.org/10.11648/j.ijmsa.20130203.11

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ACS Style

M. Ourrad; A. Merad; T. Benouaz. Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). Int. J. Mater. Sci. Appl. 2013, 2(3), 78-82. doi: 10.11648/j.ijmsa.20130203.11

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AMA Style

M. Ourrad, A. Merad, T. Benouaz. Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). Int J Mater Sci Appl. 2013;2(3):78-82. doi: 10.11648/j.ijmsa.20130203.11

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@article{10.11648/j.ijmsa.20130203.11,
  author = {M. Ourrad and A. Merad and T. Benouaz},
  title = {Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)},
  journal = {International Journal of Materials Science and Applications},
  volume = {2},
  number = {3},
  pages = {78-82},
  doi = {10.11648/j.ijmsa.20130203.11},
  url = {https://doi.org/10.11648/j.ijmsa.20130203.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130203.11},
  abstract = {The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.},
 year = {2013}
}

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TY  - JOUR
T1  - Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)
AU  - M. Ourrad
AU  - A. Merad
AU  - T. Benouaz
Y1  - 2013/05/02
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20130203.11
DO  - 10.11648/j.ijmsa.20130203.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 78
EP  - 82
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20130203.11
AB  - The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.
VL  - 2
IS  - 3
ER  -

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Author Information

M. Ourrad

Automatic Laboratory, Tlemcen University, Box. 119, Tlemcen 13000, Algeria
A. Merad

Group: Solid State Physics, Theoretical Physics Laboratory, Tlemcen University, Box. 119, Tlemcen 13000, Algeria
T. Benouaz

Automatic Laboratory, Tlemcen University, Box. 119, Tlemcen 13000, Algeria

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APA Style

M. Ourrad, A. Merad, T. Benouaz. (2013). Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). International Journal of Materials Science and Applications, 2(3), 78-82. https://doi.org/10.11648/j.ijmsa.20130203.11

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ACS Style

M. Ourrad; A. Merad; T. Benouaz. Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). Int. J. Mater. Sci. Appl. 2013, 2(3), 78-82. doi: 10.11648/j.ijmsa.20130203.11

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AMA Style

M. Ourrad, A. Merad, T. Benouaz. Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). Int J Mater Sci Appl. 2013;2(3):78-82. doi: 10.11648/j.ijmsa.20130203.11

Copy | Download

@article{10.11648/j.ijmsa.20130203.11,
  author = {M. Ourrad and A. Merad and T. Benouaz},
  title = {Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)},
  journal = {International Journal of Materials Science and Applications},
  volume = {2},
  number = {3},
  pages = {78-82},
  doi = {10.11648/j.ijmsa.20130203.11},
  url = {https://doi.org/10.11648/j.ijmsa.20130203.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130203.11},
  abstract = {The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)
AU  - M. Ourrad
AU  - A. Merad
AU  - T. Benouaz
Y1  - 2013/05/02
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20130203.11
DO  - 10.11648/j.ijmsa.20130203.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 78
EP  - 82
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20130203.11
AB  - The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.
VL  - 2
IS  - 3
ER  -

Copy | Download